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Critical role of defect states on visible luminescence from ZnS nanostructures doped with Au, Mn and Ga
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.mssp.2020.105193
Muhammad Hafeez , Bandar Ali Al-Asbahi , Mohammad Hafizuddin Hj Jumali , Muhammad Yahaya , Fakharul Inam , Muhammad Fahad Bhopal , Arshad S. Bhatti

Abstract In this paper, we present the effect of various self doping of catalysts (Au, Mn, and Ga) on the emission properties of cubic ZnS nanostructures. The solubility of the catalysts during the growth was confirmed by FESEM, HRTEM, and XRD. XPS confirmed the formation and variation of intrinsic defects like S, Zn vacancies and extrinsic defects created by self-doped catalysts, which varied with the type of catalysts. The luminescence properties of ZnS nanostructures showed strong dependence on the type of catalyst related defects. Low temperature PL spectroscopy showed that the Au created shallow surface defects states (~100 meV from the conduction band, and Ga induced shallow level defect states with emission in the UV ~360 meV). The temperature dependent PL spectroscopy showed strong negative thermal quenching of PL intensity of blue and orange emission in Au catalyzed ZnS nanostructures while Mn and Ga showed quenching behavior only in yellow and blue bands emission, respectively. Time-resolved PL spectra obtained from all nanostructures demonstrated two time decay constants. The percentage contributions of the fast decay (direct recombination of electrons and holes) and slow decay (trapped electrons at the luminescent sites) were determined for three catalyzed ZnS nanostructures. The percentage contributions and long life time components of blue and green bands were high in Au catalyzed ZnS nanostructures, compared to Mn and Ga catalyzed ZnS nanostructures. Present results indicate the potential use in a broad spectrum tunable nanolasers and multi-color light source.

中文翻译:

缺陷态对掺杂 Au、Mn 和 Ga 的 ZnS 纳米结构的可见光发光的关键作用

摘要 在本文中,我们介绍了催化剂(Au、Mn 和 Ga)的各种自掺杂对立方 ZnS 纳米结构发射特性的影响。FESEM、HRTEM 和 XRD 证实了催化剂在生长过程中的溶解度。XPS 证实了自掺杂催化剂产生的内在缺陷如 S、Zn 空位和外在缺陷的形成和变化,这些缺陷随催化剂的类型而变化。ZnS 纳米结构的发光特性显示出强烈依赖于催化剂相关缺陷的类型。低温 PL 光谱表明,Au 产生浅表面缺陷态(从导带约 100 meV,Ga 诱导浅能级缺陷态,在 UV 中发射~360 meV)。温度相关的 PL 光谱显示出 Au 催化的 ZnS 纳米结构中蓝色和橙色发射的 PL 强度的强烈负热猝灭,而 Mn 和 Ga 分别仅在黄色和蓝色带发射中表现出猝灭行为。从所有纳米结构获得的时间分辨 PL 光谱证明了两个时间衰减常数。确定了三种催化 ZnS 纳米结构的快速衰减(电子和空穴的直接复合)和慢速衰减(发光位点处的俘获电子)的百分比贡献。与 Mn 和 Ga 催化的 ZnS 纳米结构相比,Au 催化的 ZnS 纳米结构中蓝色和绿色带的百分比贡献和长寿命成分较高。目前的结果表明在广谱可调纳米激光器和多色光源中的潜在用途。
更新日期:2020-10-01
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