In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga2O3 (e-Ga2O3) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as they offer a viable method to obtain ohmic contacts on e-Ga2O3, which is less studied than other gallium oxide polymorphs but may find application in new electronic and optoelectronic devices. The newly developed ohmic contacts allow to fabricate simple test devices and assess the potential of this material.

中文翻译：

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与 ε-Ga2O3 外延薄膜的金属氧化物接触和相关传导机制

在这项工作中，研究了通过新型触点与纯相 e-Ga2O3 (e-Ga2O3) 外延膜的导电机制。由溅射金属和氧化物薄膜制成的不同结构作为电触点进行了测试。IV 特性显示出异质行为，根据施加的偏压揭示不同的传导机制。结果很有趣，因为它们提供了一种在 e-Ga2O3 上获得欧姆接触的可行方法，与其他氧化镓多晶型物相比，它的研究较少，但可能会在新的电子和光电器件中找到应用。新开发的欧姆接触允许制造简单的测试设备并评估这种材料的潜力。