Passive CMOS pixel sensors in 150 nm CMOS technology offered by LFoundry were designed and assembled into hybrid pixel modules. Advantages of commercial CMOS processes are high throughput at comparatively low costs which makes them attractive for the usage of large-area detectors. Further benefits originate from multiple metal layers, metal–insulator–metal capacitors, and polysilicon layers which can be used to enhance the sensor design. Thinned sensors were bump-bonded to the RD53A readout chip and characterized in laboratory environment and with a minimum ionizing 2.5 GeV electron beam. Their performance in terms of noise and hit-detection efficiency equals that of conventional planar pixel sensors.

LFoundry提供的采用150 nm CMOS技术的无源CMOS像素传感器已设计并组装为混合像素模块。商业CMOS工艺的优势在于以相对较低的成本实现了高吞吐量，这使其对于大面积检测器的使用具有吸引力。进一步的好处来自多个金属层，金属-绝缘体-金属电容器和多晶硅层，可用于增强传感器设计。将变薄的传感器凸点结合到RD53A读出芯片，并在实验室环境中进行表征，并具有最小化的2.5 GeV电子束。它们在噪声和命中检测效率方面的性能与常规平面像素传感器相同。