Herein, the phases, defect formation energies, and electrical properties of nominal Sn‐doped LaNb_1–xSn_xO_4–0.5x and A‐site deficient La_1–xNbO_4–1.5x materials are reported. LaNb_1–xSn_xO_4–0.5x shows a solid‐solution limit close to x = 0.03 with the defect formation energy of ≈4.13 eV. Higher conductivities are observed under wet than dry conditions, suggesting a considerable protonic contribution in the Sn‐doped materials. The calculated defect formation energy of ≈9.18 eV for creating La vacancies in La sublattice in LaNbO₄ agrees well with the fact that there are mixed dominating parent LaNbO₄ and minor orthorhombic La_0.33NbO₃ phases in nominal La_1–xNbO_4–1.5x samples. The electrical property studies reveal no proton conduction but strong n‐type electronic conduction in La_1–xNbO_4–1.5x from the minor La_0.33NbO₃ phase.

中文翻译：

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锡掺杂和铝土缺乏对高温质子导体LaNbO4的相和电导率的影响

在此，报告了标称掺锡LaNb ₁ – _x Sn _x O _{4–0.5 x}和A位置_贫La ₁ – _x NbO _{4–1.5 x}材料的相，缺陷形成能和电性能。LaNb _{1– x} Sn _x O _{4–0.5 x}表示固溶极限接近x  = 0.03，缺陷形成能为≈4.13eV。在潮湿条件下观察到的电导率高于干燥条件下的电导率，这表明掺锡材料中的质子贡献很大。计算出的在LaNbO的La子晶格中产生La空位的缺陷形成能≈9.18eV₄的事实，有混合支配父LANBO吻合良好₄和短轴正交的La _0.33的NbO _3个标称的La分阶段_{1- X}的NbO _{4-1.5 X}样品。电学研究表明，在La _{1– x} NbO _{4–1.5 x}较小的La _0.33 NbO ₃相中，没有质子传导，但有强n型电子传导。