Metal oxide semiconductor capacitors that incorporate tantalum pentoxide (Ta₂O₅) thin films as dielectric were fabricated via the atomic layer deposition (ALD) technique and characterized through TEM, XPS, C–V, and I–V measurements. TEM analysis revealed the amorphous phase of Ta₂O₅ films and the existence of an ultrathin SiO_x layer in the Ta₂O₅/p-Si interface, also evidenced by XPS spectra. XPS analysis verified the stoichiometry of the ALD-deposited Ta₂O₅ films. Furthermore, XPS results indicate values of 2.5 and 0.7 eV for the conduction and valence band offsets of the Ta₂O₅/p-Si interface, respectively. I–V measurements, for positive and negative applied bias voltages, reveal that the conduction is governed by Ohmic, trap controlled space charge limited, and Schottky mechanisms depending on the applied voltage and temperature region. Through the analysis of Schottky emission data, the conduction band offset of Ta₂O₅/p-Si (φ_Β) is calculated to be 0.6 eV, while the valence band offset is 2.6 eV, in very good agreement with the XPS results. The energy band diagram of Ta₂O₅/p-Si is constructed.

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原子层沉积在p-Si衬底上生长的Ta2O5薄膜的XPS分析和导电机理

掺入五氧化二钽（Ta金属氧化物半导体电容器₂ ö ₅）薄膜作为电介质分别经由原子层沉积（ALD）技术制造和表征通过TEM，XPS，C-V和I-V测量。TEM分析表明，Ta ₂ O ₅膜为非晶相，并且在Ta ₂ O ₅ / p-Si界面中存在超薄SiO _x层，这也由XPS光谱证明。XPS分析验证了ALD沉积Ta ₂ O ₅的化学计量电影。此外，XPS结果表明Ta ₂ O ₅ / p-Si界面的导带和价带偏移分别为2.5和0.7 eV 。对正，负外加偏置电压进行的I–V测量表明，传导受欧姆力，陷阱控制的空间电荷限制和肖特基机制控制，具体取决于所施加的电压和温度范围。通过肖特基发射数据的分析，所述导带的Ta的偏移₂ ö ₅ / p型硅（φ _Β）被计算为0.6电子伏特，而价带偏移为2.6电子伏特，与XPS结果非常一致。Ta ₂ O ₅的能带图/ p-Si已构建。