High-quality Pt thin films are prepared by atomic layer deposition (ALD) using metal-organic precursors dimethyl-(N,N-dimethyl-3-butene-1-amine-N) platinum (C₈H₁₉NPt) and with diluted molecular oxygen (O₂) as a reactant. The films are grown at a relatively low temperature of 225 °C on a thermally grown SiO₂ substrate, and the process shows all the necessary qualities of an ideal ALD such as self-limiting growth characteristics and a well-defined ALD temperature window between 200 and 250 °C. Noticeably, the current ALD-Pt process shows a very high growth per cycle of 0.167 nm without an incubation period at 225 °C, and perfect conformality is obtained at a dual trench structure (top and bottom width: 40 and 15 nm) with an aspect ratio of around 6.3. The resistivity of the ALD-Pt film at ∼39 nm in thickness deposited at 225 °C is almost the same (∼10.8 μΩ cm) as its bulk resistivity (10.6 μΩ cm), and it is as low as ∼12 μΩ cm at 25 nm in thickness. Comprehensive analyses using x-ray photoelectron spectroscopy, x-ray diffractometry, transmission electron microscopy (TEM), and x-ray reflectance indicate that the extremely low resistivity of ALD-Pt is due to the formation of highly pure and polycrystalline films with high density (∼21.04 g/cm³) and large grain size (∼48 nm for 25 nm thick film). For comparison, ALD-Ru is deposited at the same equipment and deposition temperature, 225 °C, using (ethylbenzene)(1,3-butadiene)Ru(0) (C₁₂H₁₆Ru) and diluted O₂ as the reactant. The higher resistivity of ∼20 μΩ cm at a similar thickness (∼23.5 nm) with ALD-Pt is obtained, which is much higher than its bulk value (7.6 μΩ cm). TEM analysis suggests that the formation of relatively smaller-sized grains of ALD-Ru is the main reason for it.

中文翻译：

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高质量Pt薄膜的原子层沉积作为替代Cu的替代互连

使用金属有机前体二甲基-（N，N-二甲基-3-丁烯-1-胺-N）铂（C ₈ H ₁₉ NPt）并通过稀释原子层沉积（ALD）制备高质量的Pt薄膜分子氧（O ₂）作为反应物。薄膜在225°C的相对较低温度下在热生长的SiO ₂上生长基板，并且该过程显示出理想ALD的所有必需质量，例如自限生长特性和200至250°C之间的ALD温度窗口。值得注意的是，当前的ALD-Pt工艺显示每周期0.167 nm的增长非常快，没有在225°C的潜伏期，并且在双沟槽结构（顶部和底部宽度：40和15 nm）下获得了完美的保形性。长宽比约为6.3。在ALD-Pt膜在厚度沉积在225℃~39处的电阻率几乎是相同的（~10.8  μ作为其体电阻率（Ω10.6厘米）  μ Ω厘米），并且它是低达〜12  μ厚度为25 nm时为Ωcm。使用X射线光电子能谱，X射线衍射法，透射电子显微镜（TEM）和X射线反射率进行的综合分析表明，ALD-Pt的极低电阻率是由于形成了高纯度的高密度多晶薄膜（〜21.04 g / cm ³）和大晶粒尺寸（对于25 nm厚的膜约为48 nm）。为了进行比较，使用（乙苯）（1,3-丁二烯）Ru（0）（C ₁₂ H ₁₆ Ru）和稀释的O ₂作为反应物，在相同的设备和沉积温度225°C下沉积ALD-Ru 。约20的较高的电阻率 μ Ω厘米以类似的厚度（~23.5纳米）与ALD-Pt的获得，这是比其体积值高得多（7.6  μΩcm）。TEM分析表明，形成相对较小尺寸的ALD-Ru晶粒是主要原因。