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Enhanced resistive switching characteristics of HfOxinsulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant
Journal of Vacuum Science & Technology A ( IF 2.9 ) Pub Date : 2020-03-23 , DOI: 10.1116/1.5134828
Yong Chan Jung 1, 2 , In-Sung Park 3 , Sejong Seong 1 , Taehoon Lee 1 , Seon Yong Kim 1 , Jinho Ahn 1
Affiliation  

Nanocrystalline HfOx films were synthesized by an atomic layer deposition method using Hf[N(CH3)C2H5]4 as the metal precursor and La(NO3)3·6H2O solution as the oxidant. La(NO3)3·6H2O solution played the role of both oxidant and catalyst, catalytic oxidant, where the La element in the deposited HfOx films was under the detection limit. The introduction of La(NO3)3·6H2O solution instead of H2O effectively altered the surface roughness, crystalline status, and resistive switching properties of HfOx films. Although the crystalline structures of both HfOx films made with La(NO3)3·6H2O solution and H2O were monoclinic, the surface roughness of the HfOx film grown by using the La(NO3)3·6H2O solution oxidant is smoother than that using H2O. Moreover, resistive switching characteristics of the HfOx insulator deposited with the La(NO3)3·6H2O solution oxidant enhanced not only uniformity of switching parameters but also endurance.

中文翻译:

通过原子层沉积和La(NO3)3·6H2O溶液作为催化氧化剂制备的HfOx合成器的增强电阻切换特性

以Hf [N(CH 3)C 2 H 5 ] 4为金属前驱体,以La(NO 33 ·6H 2 O溶液为氧化剂,通过原子层沉积法合成了纳米晶HfO x膜。La(NO 33 ·6H 2 O溶液起着氧化剂和催化剂,催化氧化剂的作用,其中沉积的HfO x膜中的La元素处于检测限以下。La(NO 33 ·6H 2 O溶液代替H 2的引入O有效地改变了HfO x膜的表面粗糙度,晶体状态和电阻转换特性。虽然两者的HfO的晶体结构X与的La(NO制成的膜33 ·6H 2 O解决方案和H 2 ö是单斜晶系,所述的HfO的表面粗糙度X使用的La(NO成长膜33 ·6H 2 O溶液氧化剂比使用H 2 O的氧化剂更光滑。而且,沉积有La(NO 33 ·6H 2的HfO x绝缘子的电阻转换特性O溶液氧化剂不仅增强了切换参数的均匀性,而且还增强了耐久性。
更新日期:2020-03-23
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