The sideways (radial) deposition rate and ionized flux fraction in a high power impulse magnetron sputtering (HiPIMS) discharge are studied and compared to a dc magnetron sputtering (dcMS) discharge, while the magnetic field strength $|\mathbf{B}|$ and degree of balancing are varied. A significant deposition of the film forming material perpendicular to the target surface is observed for both sputter techniques. This sideways deposition decreases with increasing axial distance from the target surface. The sideways deposition rate is always the highest in dc operation, while it is lower for HiPIMS operation. The magnetic field strength has a strong influence on the sideways deposition rate in HiPIMS but not in dcMS. Furthermore, in HiPIMS operation, the radial ion deposition rate is always at least as large as the axial ion deposition rate and often around two times higher. Thus, there are a significantly higher number of ions traveling radially in the HiPIMS discharge. A comparison of the total radial as well as axial fluxes across the entire investigated plasma volume between the target and the substrate position allows for revised estimates of radial over axial flux fractions for different magnetic field configurations. It is here found that the relative radial flux of the film forming material is greater in dcMS compared to HiPIMS for almost all cases investigated. It is therefore concluded that the commonly reported reduction of the (axial) deposition rate in HiPIMS compared to dcMS does not seem to be linked with an increase in sideways material transport in HiPIMS.

中文翻译：

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直流和大功率脉冲磁控溅射中的横向沉积速率和电离通量分数

研究了大功率脉冲磁控溅射（HiPIMS）放电中的侧向（径向）沉积速率和电离通量分数，并将其与dc磁控溅射（dcMS）放电进行了比较，而磁场强度 $|\mathbf{乙}|$和平衡程度各不相同。对于两种溅射技术，都观察到垂直于靶表面的成膜材料的大量沉积。随着与目标表面的轴向距离增加，该横向沉积减少。横向沉积速率在直流操作中始终是最高的，而对于HiPIMS操作则较低。磁场强度对HiPIMS中的横向沉积速率有很大影响，而对dcMS则没有。此外，在HiPIMS操作中，径向离子沉积速率始终至少与轴向离子沉积速率一样大，通常大约高两倍。因此，在HiPIMS放电中有大量的径向放射离子。比较目标和基板位置之间整个研究的等离子体体积中的总径向通量和轴向通量，可以对不同磁场配置的径向通量和轴向通量分数进行修正估计。在此发现，在几乎所有研究的情况下，与HiPIMS相比，dcMS中成膜材料的相对径向通量都更大。因此得出的结论是，与dcMS相比，HiPIMS中（轴向）沉积速率的普遍减少似乎与HiPIMS中侧向材料传输的增加没有联系。在此发现，在几乎所有研究的情况下，与HiPIMS相比，dcMS中成膜材料的相对径向通量都更大。因此得出的结论是，与dcMS相比，HiPIMS中（轴向）沉积速率的普遍减少似乎与HiPIMS中侧向材料传输的增加没有联系。在此发现，在几乎所有研究的情况下，与HiPIMS相比，dcMS中成膜材料的相对径向通量都更大。因此得出的结论是，与dcMS相比，HiPIMS中（轴向）沉积速率的普遍减少似乎与HiPIMS中侧向材料传输的增加没有联系。