Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

最近，已证明碳化硅（SiC）中与空位相关的自旋缺陷可能适用于通用量子界面构建和可扩展量子网络构建。已经进行了巨大的努力来识别SiC中的自旋系统，并使用大规模生长和先进的纳米制造方法来扩展其量子能力。在这里，我们证明了通过高温后退火通过氢离子注入产生的4H多晶SiC的自旋缺陷类型，它不同于任何已知的缺陷。即使在室温下，也可以对这些自旋缺陷进行光学处理和相干控制，并且它们的荧光光谱和光学检测的磁共振光谱与任何先前发现的缺陷不同。此外，通过优化注入后的退火温度，可以很好地控制这些缺陷的产生。这些缺陷显示出具有相干控制的电子自旋的高热稳定性，有利于它们在苛刻条件下的量子传感和激射中的应用。