This article provides an overview of the published mechanical stress data for boron- and phosphorus-contained silicate glass films deposited by a variety of chemically vapor deposited (CVD) techniques, i.e. atmospheric and sub-atmospheric pressure (APCVD, SACVD), low pressure, plasma-enhanced (LPCVD, PECVD). The emphasis is done on borophosphosilicate glass films (BPSG) dedicated for the use in micro-electro-mechanical system (MEMS) and micro-opto-electro-mechanical system (MOEMS) technologies as a material with significantly higher film thickness as compared with its traditional use in microelectronics technology as a flow-able planarized interlayer dielectric. The article covers stress features of as-deposited and thermally annealed films with the boron and phosphorus concentration range in between about 1–12 wt%. Phosphorus is detected as a main film component responsible for stress type (tensile or compressive) and its particular values. Film deposition techniques strongly a...

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评论—化学气相沉积含硼和磷的硅酸盐玻璃薄膜中的机械应力：综述

本文概述了通过各种化学气相沉积（CVD）技术沉积的含硼和磷的硅酸盐玻璃薄膜的机械应力数据，该技术包括大气压和低于大气压（APCVD，SACVD），等离子增强（LPCVD，PECVD）。重点放在专用于微机电系统（MEMS）和微光电机电系统（MOEMS）技术的硼磷硅玻璃膜（BPSG）上，该膜的膜厚比其膜厚高得多。在微电子技术中的传统用途是作为可流动的平面化夹层电介质。本文介绍了沉积态和热退火薄膜的应力特征，硼和磷的浓度范围在1-12 wt％之间。磷是引起应力类型（拉伸或压缩）及其特定值的主要薄膜成分。薄膜沉积技术强烈地...