We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10 14 cm −2 ) Si-doped β -Ga 2 O 3 Schottky rectifiers. The diffusion length ( L ) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β -Ga 2 O 3 Schottky rectifiers is presented.

中文翻译：

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电子注入对10 MeV质子辐照β-Ga 2 O 3肖特基整流器中少数载流子传输的影响

我们报道了延长的电子束暴露时间对10 MeV质子辐照（注量〜10 14 cm -2）掺Si的β-Ga 2 O 3肖特基整流器的少数载流子传输性能的影响。发现少数载流子的扩散长度（L）随着温度从21°C的330 nm降低到120°C的289 nm，激活能量为〜26 meV。此能量对应于浅Si陷阱能级的存在。延长时间的电子束曝光可在室温下将L从330 nm提高到726 nm。L的增加速率随温度升高而降低，活化能为43meV。最后，简要比较了电子注入对质子辐照，α粒子辐照和参比Si掺杂的β-Ga 2 O 3肖特基整流器的影响。