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Amorphous Si-rich tungsten silicide with a low work function near the conduction band edge of Si
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-05-13 , DOI: 10.35848/1882-0786/ab8d49
Naoya Okada 1 , Noriyuki Uchida 1 , Shinichi Ogawa 1 , Toshihiko Kanayama 2
Affiliation  

The capacitance–voltage characteristics of MOS capacitors and ab initio theoretical calculations revealed that an amorphous film composed of WSin clusters (n = 6−12) had a low effective work function of 4.0 eV on SiO2 with excellent thermal stability up to 600oC. In Si Schottky diodes with WSin insertion, the electron Schottky barrier height (SBH) was 0.58 eV for n = 6 and reduced to 0.45 eV when n = 12. The n-dependency of SBH was attributed to the surface passivation of WSin becoming more effective as n increased, with annealing leading to a lower value of 0.32 eV.

中文翻译:

在 Si 导带边缘附近具有低功函数的非晶富 Si 硅化钨

MOS 电容器的电容-电压特性和从头算理论计算表明,由 WSin 簇(n = 6-12)组成的非晶薄膜在 SiO2 上具有 4.0 eV 的低有效功函数,并且在高达 600oC 时具有出色的热稳定性。在插入 WSin 的 Si 肖特基二极管中,电子肖特基势垒高度 (SBH) 在 n = 6 时为 0.58 eV,当 n = 12 时降至 0.45 eV。SBH 的 n 依赖性归因于 WSin 的表面钝化变得更有效随着 n 增加,退火导致 0.32 eV 的较低值。
更新日期:2020-05-13
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