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Damage control of ion implantation for advanced doping process by using in-situ temperature control
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.mssp.2020.105164
KyungWon Lee , Michael Saied Ameen , Leonard Michael Rubin , Dwight Dongwan Roh , Rimpyo Hong , Ronald Norman Reece , DaeHo Yoon

Abstract Most silicon nano-devices use ion implantation doping for electric characteristics due to precise control of concentration and location of the dopants. A consequence of ion implantation is the damage to the silicon caused when injecting dopants into silicon substrate that break the silicon structure. This damage causes leakage or electron trapping in device circuits. Therefore, minimizing implant damage is of high importance. In general, ion implantation uses photoresist coatings, which can endure no more than 200 °C to make selected area doping. We characterized ion implantation damage on bare wafers by optimizing the process temperature during implant. Elevated temperatures during implant induce “self-annealing” which reduces the damage to the silicon structure as the implant occurs. We propose that in-situ temperature control can limit ion implant damage on the transistor well and photo diode steps on advanced Complementary Metal-Oxide Semiconductor (CMOS) image sensor devices.

中文翻译:

基于原位温度控制的先进掺杂工艺离子注入损伤控制

摘要 由于精确控制掺杂剂的浓度和位置,大多数硅纳米器件使用离子注入掺杂来实现电特性。离子注入的结果是在将掺杂剂注入硅衬底时会损坏硅,从而破坏硅结构。这种损坏会导致器件电路中出现泄漏或电子俘获。因此,尽量减少植入物损坏非常重要。离子注入一般采用光刻胶涂层,可耐受不超过200℃的温度进行选区掺杂。我们通过优化注入过程中的工艺温度来表征裸晶圆上的离子注入损伤。注入期间升高的温度会引起“自退火”,从而减少注入发生时对硅结构的损坏。
更新日期:2020-10-01
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