Abstract The SiC whiskers were prepared on carbon matrix by high hydrogen-containing silicone oil (H-PSO) as raw materials. Based on the results of previous experiments, we further studied the effect of non-heat treatment factor on growth of SiC whiskers, including type and thickness of carbon matrix, size of embedded powders, and growth catalysts. The results showed that the powder particle size and the matrix should be properly matched to facilitate whisker growth. When grown on 2 mm graphite plate, the particle size was 150 μm-180 μm, the SiC whiskers were straight, smooth and homogeneous, showing hexagonal prisms morphology, which were bounded by low-energy (1 1 1) planes, rather than silicon oxide coating. The change of particle size led to the change of concentration of reaction gas and partial pressure of oxygen, which resulted in the difference content of silicon oxide in whiskers, showing hexagonal prisms or cylindrical morphology. Adding growth catalyst, the whisker morphology was not as good as the whisker grown without catalyst, and the growth mechanism had changed.

中文翻译：

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氢硅油衍生的碳化硅晶须生长新发现

摘要 以高含氢硅油（H-PSO）为原料，在碳基体上制备了碳化硅晶须。在之前的实验结果的基础上，我们进一步研究了非热处理因素对碳化硅晶须生长的影响，包括碳基体的类型和厚度、嵌入粉末的尺寸和生长催化剂。结果表明，粉末粒径和基体应适当匹配以促进晶须生长。在 2 mm 石墨板上生长时，粒径为 150 μm-180 μm，SiC 晶须笔直、光滑且均匀，呈现六棱柱形貌，以低能 (1 1 1) 面为界，而不是硅氧化物涂层。粒径的变化导致反应气体浓度和氧气分压的变化，这导致晶须中氧化硅的含量不同，呈现六方棱柱或圆柱形形态。添加生长催化剂后，晶须形态不如无催化剂生长的晶须好，生长机理发生了变化。