Abstract This study presents and compares two original high-speed protection circuit methods, namely, i g integration and v gs derivation, against short-circuit types, referred to as, the hard switch fault and fault under load. Since the gate–drain capacitor C gd of a power device depends on the drain to source voltage v ds , it can become an original native sensor to monitor the switching operation and so detect the unwanted v ds transition or the absence of the v ds transition by monitoring only v gs . The use of only low-voltage monitoring, such as v gs , is an essential step to integrate fast and embedded new detection methods into a low-voltage application-specific integrated circuit gate driver, in particular for wide bandgap power transistors. The C g d capacitor plays a major part in the two detection methods. The first method is based on dedicated two-dimensional monitoring of the gate charge transferred in a time interval combined with gate voltage monitoring. The second method consists of the reconstruction of the dv g s /dt by means of a capacitive current sensing to provide the v gs derivation combined with the v g s monitoring. Comparison and simulation of the methods based on a C2M0025120D SiC MOSFET device under LTspice™ are made to verify the validity of the methods. In terms of detection speed of the short circuit, a detection time of 200 ns is obtained for both methods. Experimental waveforms based on C3M0120090J SiC MOSFET device were included into LTspice TM to push furthermore the methods to their limits and validate the approaches. Both methods are easy to design and to integrate. However, the robustness and the speed of detection trade-off of all these methods should be analysed and compared relative to the critical functionalities.

中文翻译：

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专用于宽带隙功率晶体管快速短路二维诊断的ig积分和vgs推导方法的比较

摘要 本研究针对短路类型，即硬开关故障和负载故障，提出并比较了两种原始的高速保护电路方法，即ig积分和v gs推导。由于功率器件的栅漏电容 C gd 取决于漏源电压 v ds ，它可以成为原始的原生传感器来监控开关操作，从而检测不需要的 v ds 转换或不存在 v ds 转换通过仅监控 v gs 。仅使用低电压监测（例如 v gs ）是将快速和嵌入式新检测方法集成到低电压专用集成电路栅极驱动器（尤其是宽带隙功率晶体管）中的必要步骤。C gd 电容器在两种检测方法中起着主要作用。第一种方法基于对在时间间隔内传输的栅极电荷的专用二维监测与栅极电压监测相结合。第二种方法包括通过电容电流感测重建 dv gs /dt 以提供与 vgs 监测相结合的 v gs 推导。对基于 LTspice™ 下的 C2M0025120D SiC MOSFET 器件的方法进行比较和仿真，以验证方法的有效性。在短路检测速度方面，两种方法的检测时间均为200 ns。LTspice TM 中包含基于 C3M0120090J SiC MOSFET 器件的实验波形，以进一步将方法推向极限并验证方法。这两种方法都易于设计和集成。然而，