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Influence of substrate nitridation on properties of GaN nanorods grown on molybdenum foil by laser molecular beam epitaxy
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2020-05-13 , DOI: 10.1016/j.physb.2020.412255
Ch. Ramesh , P. Tyagi , S. Gautam , S. Ojha , M. Senthil Kumar , S.S. Kushvaha

We studied the effect of nitridation condition of Mo foil on the properties of GaN nanorods grown by laser molecular beam epitaxy. It is found that randomly size-distributed three-dimensional GaN islands were grown on bare Mo foil at growth temperature of 700 °C. Upon nitridation of Mo foil with low nitrogen plasma flux, hexagonally-faceted inverse-tapered GaN nanorods were grown whereas tapered GaN nanorods were obtained for Mo foil nitridated under high nitrogen plasma flux. Using wet-chemical etching process, it is deduced that the inverse-tapered GaN nanorods have N-polarity while the tapered GaN nanorods have Ga-polarity. Optical analysis revealed that the inverse-tapered GaN nanorods have prominent near band edge (NBE) emission peak with negligible defect-related peaks whereas tapered GaN nanorods possess yellow luminescence peak along with NBE emission. The control of polarity of GaN nanords on flexible metal foils by tuning pre-nitridation condition is beneficial for futuristic nitride-based flexible opto-electronics devices.



中文翻译:

衬底氮化对激光分子束外延生长在钼箔上的GaN纳米棒性能的影响

我们研究了钼箔的氮化条件对激光分子束外延生长的GaN纳米棒性能的影响。发现在700°C的生长温度下,在裸Mo箔上生长了尺寸随机分布的三维GaN岛。在用低氮等离子体通量氮化Mo箔时,生长了六角形的倒锥形GaN纳米棒,而对于在高氮等离子体通量下氮化的Mo箔则获得了锥形GaN纳米棒。利用湿化学刻蚀工艺,可以得出反锥形GaN纳米棒具有N极性,而锥形GaN纳米棒具有Ga极性。光学分析表明,反锥形GaN纳米棒具有明显的近带边缘(NBE)发射峰,而与缺陷相关的峰可忽略不计,而锥形GaN纳米棒随NBE发射具有黄色发光峰。通过调整预氮化条件来控制柔性金属箔上GaN纳米粒子的极性,对于未来的基于氮化物的柔性光电器件是有益的。

更新日期:2020-05-13
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