ABSTRACT In 1970, when the bell system demonstrated the charge-coupled devices (CCD), it was not known at the time that it would revolutionize the imaging. The ability of CCD to integrate and shift the charge with precise control had made it most selected choice for military, space, medical imaging as well as industrial applications. After revolution in CMOS imaging technology in early 90s, people were able to make CMOS imagers which consumed very less power and included all control and processing electronics in it, leading to very compact imaging system (popularly abbreviated as CIS, i.e. CMOS imaging system). However, only after the development of low noise switched capacitor circuits and active pixel-based image sensors (APS) it became feasible to take advantage of both, i.e. the Time Delay and Integration (TDI) feature of CCD with flexibility and compactness of circuit implements in CMOS. In this review, we present the circuit level evolution and the development of TDI implementation in CMOS. This review will provide an easy explanation of TDI-based imaging applications in CMOS technology for scholars interested in the field.

中文翻译：

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用于成像应用的延时积分 (TDI) CMOS 实现：简要回顾

摘要 1970 年，当钟系统展示电荷耦合器件（CCD）时，当时并不知道它会彻底改变成像。CCD 以精确控制集成和转移电荷的能力使其成为军事、空间、医学成像以及工业应用的最佳选择。90 年代初 CMOS 成像技术革命后，人们能够制造出功耗极低且包含所有控制和处理电子设备的 CMOS 成像器，从而形成了非常紧凑的成像系统（通俗地缩写为 CIS，即 CMOS 成像系统）。然而，只有在低噪声开关电容器电路和基于有源像素的图像传感器 (APS) 的发展之后，利用两者的优势才变得可行，即 CCD 的时间延迟和积分 (TDI) 功能以及 CMOS 中电路实现的灵活性和紧凑性。在这篇综述中，我们介绍了 CMOS 中的电路级演变和 TDI 实现的发展。这篇综述将为对该领域感兴趣的学者提供关于 CMOS 技术中基于 TDI 的成像应用的简单解释。