ABSTRACT In this work, performance of Double Gate Gaussian Doped Negative Capacitance Junctionless Transistor (DGGDNCJLT) has been studied for temperature range 200–500 K to explore the suitability of the device for applications which demand operation at extended temperature range. The device behavior has been studied by using temperature dependent Landau parameters of ferroelectric material doped hafnium oxide with standard TCAD models. Further, to achieve improved device performance over a wide temperature range, ferroelectric material parameters have been optimized to enhance the impact of negative capacitance effect which consequently improves device characteristics. It has been demonstrated that even for a wide temperature range 200–500 K, DGGDNCJLT exhibits substantial improvement in gate controllability, I ON/I OFF ratio, subthreshold swing values less than 60 mV/dec and enhanced current drivability for optimized ferroelectric parameters.

中文翻译：

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用于 200-500 K 的双栅极高斯掺杂负电容无结晶体管的卓越性能和可靠性

摘要 在这项工作中，研究了双栅极高斯掺杂负电容无结晶体管 (DGGDNCJLT) 在 200-500 K 温度范围内的性能，以探索该器件对需要在扩展温度范围内运行的应用的适用性。通过使用铁电材料掺杂氧化铪的温度相关朗道参数和标准 TCAD 模型研究了器件行为。此外，为了在较宽的温度范围内实现改进的器件性能，已优化铁电材料参数以增强负电容效应的影响，从而改善器件特性。已经证明，即使在 200-500 K 的宽温度范围内，DGGDNCJLT 在栅极可控性、I ON/I OFF 比、