With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future applications. RRAM is not only more scalable, but is typically faster and consumes less power than the existing memory technologies. However, RRAM suffers from higher impact of variations and reliability issues. In this review paper, we explain the basic aspects of RRAMs, highlight their advantages and elucidate challenges involved in replacing the existing memory technologies with RRAMs.

中文翻译：

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电阻式随机存取存储器：设备挑战回顾

随着缩放，现有的基于电荷的存储技术由于电荷在较小的设备中容易泄漏而表现出局限性。因此，诸如电阻式随机存取存储器 (RRAM) 之类的基于非电荷的存储器技术在未来的应用中变得很有前景。RRAM 不仅具有更高的可扩展性，而且通常比现有内存技术更快且功耗更低。然而，RRAM 受到变化和可靠性问题的更大影响。在这篇评论论文中，我们解释了 RRAM 的基本方面，强调了它们的优势并阐明了用 RRAM 替换现有内存技术所涉及的挑战。