ABSTRACT Gallium phosphide can be considered as a prospective material for impurity band solar cell (IBSC), if sufficient amount of an appropriate impurity (Ti in our case) is introduced to the material by e.g. ion implantation without distorting the crystallographic order, necessary to maintain the semiconducting properties of the host. In our experiments, the crystallographic order (damaged by ion implantation) is restored by electron pulse annealing (EPA). When the EPA process using subthreshold electron pulse energy density is studied by RBS technique, a peculiar electron-pulse induced lattice reconstruction is observed, consisting in growth of the damaged region beyond the range observed after ion implantation. This phenomenon is confirmed by transmission electron microscopy (TEM) results and interpreted in terms of melting nuclei formed around the implanted ions in a material with high sublimation pressure.

中文翻译：

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Ti注入GaP的电子脉冲退火的晶体学变化

摘要 磷化镓可以被认为是杂质带太阳能电池 (IBSC) 的预期材料，如果通过例如离子注入将足够数量的适当杂质（在我们的例子中为 Ti）引入材料中而不扭曲晶体顺序，这是维持材料所必需的主体的半导体特性。在我们的实验中，电子脉冲退火 (EPA) 恢复了晶体顺序（被离子注入损坏）。当通过 RBS 技术研究使用亚阈值电子脉冲能量密度的 EPA 过程时，观察到一种特殊的电子脉冲诱导晶格重建，包括在离子注入后观察到的范围之外的损伤区域的生长。