ABSTRACT Thermally grown SiO2 thin films on a silicon substrate implanted with 100 keV silicon negative ions with fluences varying from 1 × 1015 to 2 × 1017 ions cm−2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and Pb-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080 cm−1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95 × 1021 cm−3 and 5.20 × 1021 cm−3 and between 5.90 × 1021 cm−3 and 3.90 × 1021 cm−3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720 nm.

中文翻译：

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硅负离子注入引起热生长 SiO2 薄膜中的空位缺陷

摘要 使用电子自旋共振、傅里叶变换红外和光致发光技术研究了在注入了 100 keV 硅负离子的硅衬底上热生长的 SiO2 薄膜，其能量密度从 1 × 1015 到 2 × 1017 离子 cm-2 不等。ESR 研究表明，在 g 值分别为 2.0087、2.0052 和 2.0010 时，存在非桥接氧空穴中心、E' 中心和 Pb 中心。发现这些空位缺陷随离子注量而增加。FTIR 光谱分别在 460、614、800 和 1080 cm-1 处显示摇摆振动模式、拉伸模式、弯曲振动模式和不对称拉伸吸收带。发现从吸收光谱估计的 Si-O 和 Si-Si 键的浓度在 11.95 × 1021 cm-3 和 5.20 × 1021 cm-3 和 5 之间变化。随着离子注量的增加，分别为 90 × 1021 cm-3 和 3.90 × 1021 cm-3。PL 研究揭示了与非桥接氧空穴中心相关的空位的存在，这导致了波长为 720 nm 的光发射。