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Thermal-piezoelectric problem of a semiconductor medium during photo-thermal excitation
Waves in Random and Complex Media ( IF 4.051 ) Pub Date : 2020-04-29 , DOI: 10.1080/17455030.2020.1757784
Alaa. K. Khamis 1 , Kh. Lotfy 2, 3 , A. A. El-Bary 4 , Amr M. S. Mahdy 2, 5 , M. H. Ahmed 2, 3
Affiliation  

The main goal of this paper is to develop a mathematical model for the piezoelectric elastic-semiconductor medium. The medium is homogeneous and isotropic that is exposed to photothermal excitation processes. Gauss’s law of electrostatics is used to obtain the effect of the piezoelectric phenomenon. The governing equations with the electric potential are expressed in terms of thermoelasticity theory and photothermal theory. One-dimensional Laplace transform is used to get the solution of some physical quantities when the heat sources and body forces are absent. The mechanical forces and thermal loads are used to get the analytical solution of physical quantities under investigation. The inverse Laplace technique with a numerical method is employed to obtain the solution in the time-physical domain. A novel parameter depends on pyro-electric moduli is presented. Some numerical results are illustrated and shown graphically.



中文翻译:

光热激发过程中半导体介质的热压电问题

本文的主要目标是开发压电弹性半导体介质的数学模型。介质是均质和各向同性的,暴露于光热激发过程。高斯静电定律用于获得压电现象的效果。电势的控制方程用热弹性理论和光热理论表示。一维拉普拉斯变换用于在没有热源和体力的情况下得到一些物理量的解。机械力和热载荷用于获得所研究物理量的解析解。使用数值方法的逆拉普拉斯技术来获得时物理域中的解。一个新的参数取决于热电模量。一些数值结果被说明并以图形方式显示。

更新日期:2020-04-29
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