The surface termination of In₄Se₃(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C_2v mirror plane symmetry. The surface termination of the In₄Se₃(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In₄Se₃(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

In ₄ Se ₃ (001)的表面终止和这种层状三硫属化物与 Au 的界面使用 X 射线光电子能谱进行了检查。低能电子衍射表明表面是高度结晶的，但表明不存在 C _2v镜面对称性。In ₄ Se ₃ (001)的表面终止，通过角分辨 X 射线光电子发射光谱发现，是 In，这与观察到的肖特基势垒形成在这种 n 型半导体中发现的一致。晶体管测量证实了光发射的早期结果，表明 In ₄ Se ₃(001) 是 n 型半导体，因此可以预期形成具有大功函数金属（例如 Au）的肖特基势垒。测得的低载流子迁移率可能是接触的结果，并且与肖特基势垒形成一致。