Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

中文翻译：

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通过磁控溅射生长的电可调晶圆尺寸三维拓扑绝缘体薄膜

三维 (3D) 拓扑绝缘体 (TI) 因其强大的自旋轨道耦合和独特的表面电子结构而成为各种电子和自旋电子器件的候选材料。与传统半导体技术兼容的大面积 TI 薄膜的快速、低成本制备是 TI 实际应用的关键。在这里，我们展示了可以通过磁控共溅射在非晶 SiO2/Si 衬底上制备具有良好质量和良好控制的成分和性能的晶片大小的 Bi2Te3 族 TI 和磁性 TI 薄膜。SiO2/Si 衬底使我们能够在 p 型和 n 型行为之间对 (Bi1-xSbx)2Te3 和 Cr 掺杂的 (Bi1-xSbx)2Te3 TI 薄膜进行电调节，从而研究与拓扑表面状态相关的现象，例如量子反常霍尔效应 (QAHE)。