Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET,Radiation Effects and Defects in Solids

当前位置： X-MOL 学术 › Radiat. Eff. Defects Solids › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
Radiation Effects and Defects in Solids ( IF 1 ) Pub Date : 2020-01-20 , DOI: 10.1080/10420150.2019.1704757
Xiaowen Liang _{1,

2,

3} , Jiangwei Cui _{1,

2} , Qiwen Zheng _{1,

2} , Jinghao Zhao _{1,

2,

3} , Xuefeng Yu _{1,

2} , Jing Sun _{1,

2} , Dan Zhang _{1,

2} , Qi Guo _{1,

2}

Affiliation

ABSTRACT A study on the long-term reliability of SiC MOSFET in different operating biases under total ionizing dose radiation environment was carried out. The relationship between radiation-induced degradation of electrical parameters and time-dependent dielectric breakdown characteristics was analyzed through the energy band theory and feedback runaway model.

中文翻译：