当前位置: X-MOL 学术Nanoscale Res. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement.
Nanoscale Research Letters ( IF 5.418 ) Pub Date : 2020-05-11 , DOI: 10.1186/s11671-020-03333-w
Yue Shi 1 , Shilei Li 2 , Jianwen Cao 2 , Zekun Zhou 2 , Weiwei Ling 1
Affiliation  

In this paper, an improved self-biased bandgap reference (BGR) with high power supply rejection ratio (PSRR) is presented. An operational amplifier constructing feedback loop is multiplexed with the generation of positive temperature coefficient (TC) voltage for lower power consumption, where an offset voltage is adopted to achieve proportional to absolute temperature (PTAT) voltage. With the temperature-independent reference generation, two feedback loops are realized at the same time for PSRR enhancement, which form a local negative feedback loop (LNFL) and a global self-biased loop (GSBL). The proposed BGR is implemented in a 180 nm BCD technology, whose results show that the generated reference voltage is 2.506 V, and the TC is 25 ppm/°C in the temperature range of -55 to 125 °C. The line sensitivity (LS) is 0.08 ‰/V. Without any filter capacitor, the PSRR is 76 dB at low frequencies, over 46 dB up to 1 MHz.

中文翻译:

具有高PSRR增强的180 nm自偏置带隙基准。

本文提出了一种具有高电源抑制比(PSRR)的改进的自偏置带隙基准(BGR)。构造反馈环路的运算放大器与正温度系数(TC)电压的生成复用,以降低功耗,其中采用失调电压来实现与绝对温度(PTAT)电压成比例的电压。利用与温度无关的基准生成,可以同时实现两个反馈环路以增强PSRR,从而形成一个局部负反馈环路(LNFL)和一个全局自偏置环路(GSBL)。拟议的BGR在180 nm BCD技术中实现,其结果表明,在-55至125°C的温度范围内,产生的参考电压为2.506 V,TC为25 ppm /°C。线路灵敏度(LS)为0.08‰/ V。
更新日期:2020-05-11
down
wechat
bug