Chemical vapor deposition (CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond (SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence (CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency (CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

已开发出化学气相沉积（CVD）生长的金刚石膜作为抗辐射材料，以替代或升级用于极端辐射环境的电流检测器。但是，由于纯金刚石晶体材料中的缺陷和杂质而引起的空间电荷稳定性问题抑制了它们在实际应用中的敏感性。在这项研究中，制造和表征了两个高质量的，CVD生长的氮杂质含量低的单晶金刚石（SCD）检测器。使用拉曼光谱，立体显微镜和X射线衍射（具有摇摆曲线模式），阴极发光（CL）以及红外和紫外可见近红外光谱对SCD样品的固有性质进行了表征。包装好探测器之后，研究了α粒子辐照下的暗电流和能量分辨率。电极退火后，在100 V时获得的暗电流小于5 pA，这与先前报道的最佳值相当。使用含氮量更高的金刚石膜的探测器显示出较差的能量分辨率，而位错更多的探测器则显示出较差的电荷收集效率（CCE）。这表明金刚石中的氮含量对探测器的能量分辨率有显着影响，而金刚石中的位错很大程度上导致探测器的CCE差。使用含氮量更高的金刚石膜的探测器显示出较差的能量分辨率，而位错更多的探测器则显示出较差的电荷收集效率（CCE）。这表明金刚石中的氮含量对探测器的能量分辨率有显着影响，而金刚石中的位错很大程度上导致探测器的CCE差。使用含氮量更高的金刚石膜的探测器显示出较差的能量分辨率，而位错更多的探测器则显示出较差的电荷收集效率（CCE）。这表明金刚石中的氮含量对探测器的能量分辨率有显着影响，而金刚石中的位错很大程度上导致探测器的CCE差。