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Inspection of fabrication defects in REBCO coated conductors from various industrial manufacturers under similar fabrication conditions using the DEM approach
Physica C: Superconductivity and its Applications ( IF 1.7 ) Pub Date : 2020-05-12 , DOI: 10.1016/j.physc.2020.1353664
Stephen Ogbonna Mbam , Xiao-Fan Gou

In this study, the authors carried out an inspection of the extent of fabrication defects in rare-earth barium copper oxide (REBCO) coated conductors (CC) using the displacement-energy model (DEM) approach. The DEM approach can simulate the creation, propagation, and distribution of interfacial defects during the deposition of films onto a substrate, thereby save researchers the enormous resources needed to carry out similar studies experimentally. Defects in a sample originate from the interlayer interactions such as the thermal mismatch and eigenstates of layers as a function of temperature and time, respectively. The induced strains or gaps (determined by an increase in a lattice constant) between an interface in a sample caused by the interlayer interactions are computed as losses of bonding energy between interacting molecules using modified Hamaker models. The samples used for the simulation are based on the tape architecture of three leading industrial manufacturers of coated conductors (SuperPower Incorporated, Bruker High-Temperature Superconductors, and American superconductors). Also, in the simulation of this study, it assumes the samples from the manufacturers have a similar size (length x width) and fabrication method (chemical deposition method) to determine a tape architecture with comparatively lesser fabrication defects under similar fabrication conditions. Primarily, simulation results show that samples with more number of layers suffer relatively higher losses of bonding energy. According to this study and previous studies, the computed results on the DEM approach are consistent with those on several valuable experiments and models in the literature.



中文翻译:

使用DEM方法在相似的制造条件下检查来自各种工业制造商的REBCO涂层导体的制造缺陷

在这项研究中,作者使用位移能模型(DEM)方法对稀土钡铜氧化物(REBCO)涂层导体(CC)的制造缺陷程度进行了检查。DEM方法可以在将膜沉积到基板上的过程中模拟界面缺陷的产生,传播和分布,从而为研究人员节省了通过实验进行类似研究所需的大量资源。样品中的缺陷分别来自层间相互作用,例如层的热失配和本征态随温度和时间的变化。使用改进的Hamaker模型,将由层间相互作用引起的样品界面之间的诱导应变或间隙(由晶格常数的增加确定)计算为相互作用分子之间的键能损失。用于仿真的样本基于三个领先的涂层导体工业制造商(SuperPower Incorporated,Bruker高温超导体和美国超导体)的胶带体系结构。同样,在本研究的模拟中,假设制造商的样品具有相似的尺寸(长度x宽度)和制造方法(化学沉积方法),以确定在类似制造条件下具有相对较少制造缺陷的带结构。首先,仿真结果表明,层数更多的样品的键合能量损失相对较高。根据这项研究和以前的研究,DEM方法的计算结果与文献中一些有价值的实验和模型的计算结果一致。

更新日期:2020-05-12
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