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Growth of c-plane and m-plane aluminium-doped zinc oxide thin films: epitaxy on flexible substrates with cubic-structure seeds.
Acta Crystallographica Section B ( IF 2.684 ) Pub Date : 2020-03-19 , DOI: 10.1107/s2052520620002668
Yongkuan Li 1 , Xinxing Liu 1 , Dan Wen 1 , Kai Lv 1 , Gang Zhou 1 , Yue Zhao 2 , Congkang Xu 1 , Jiangyong Wang 1
Affiliation  

Manufacturing high‐quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c‐plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic‐structure seeds, it was possible to fabricate polar c‐plane and nonpolar m‐plane aluminium‐doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c‐plane and m‐plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm‐thick m‐plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c‐plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c‐plane than in the m‐plane AZO film results from the electrical polarity along the c‐axis. The resistivity of the c‐plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high‐performance flexible ZnO devices.

中文翻译:

c平面和m平面掺杂铝的氧化锌薄膜的生长:具有立方结构种子的柔性衬底上的外延生长。

由于垂直于c平面的自发性和压电极性,制造高质量的氧化锌(ZnO)器件需要控制ZnO材料的方向。然而,柔性电子和光电设备主要建立在缺乏合适的外延晶种用于取向控制的聚合物或玻璃基板上。应用立方结构晶种,可以通过最大程度地减少晶格失配,在柔性哈氏合金衬底上外延制造极性c面和非极性m面掺杂铝的氧化锌(AZO)膜。预测c平面和m的增长晶格参数分别为3.94–4.63Å和5.20–5.60Å的三次缓冲区上的平面AZO。在〜80 nm厚的-平面AZO膜具有~11.43±0.01×10的电阻率-4  Ω厘米,而Ç -平面AZO膜节目~2.68±0.02×10的电阻率-4  Ω厘米比得上商业铟锡氧化物薄膜。沿c轴的极性导致c平面中的载流子浓度异常高于m平面AZO膜中的载流子浓度。c平面AZO膜的电阻率下降到10 -5的数量级 由于半导体行为,在500 K时为Ωcm。在柔性基板上具有低电阻率和可控取向的外延AZO膜为高性能柔性ZnO器件提供了最佳的透明电极和外延晶种。
更新日期:2020-03-19
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