In article number 202000110, Aleksandar Matković, Barbara Stadlober, and co‐workers resolve the issue of high contact resistances in bottom‐contact 2D semiconductor devices. A reduction of the contact resistance exceeding two orders of magnitude is achieved via a suitable self‐assembled‐monolayer treatment, vastly improving overall device performance. The asymmetric and bias‐dependent nature of contact resistances is revealed by Kelvin probe force microscopy measurements.

中文翻译：

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2D半导体：使用含嘧啶的自组装单分子膜进行MoS2 / Gold界面的界面能带工程：走向无接触电阻的底部接触（Adv。Electron。Mater。5/2020）

AleksandarMatković，Barbara Stadlober和同事在文章编号202000110中解决了底部接触2D半导体器件中高接触电阻的问题。通过适当的自组装单层处理，可将接触电阻降低超过两个数量级，从而极大地改善了整个器件的性能。开尔文探针力显微镜测量揭示了接触电阻的不对称和偏倚依赖性。