This work demonstrates the SRAM cell operation using planar reconfigurable devices (Reconfigurable field effect transistor - RFET). All the six devices used in the SRAM realization are identical. The N and P operations are achieved through the program gates. The cell performance is evaluated using hold, write and read static noise margins (SNM). Both the RFET and RFET-based SRAM cell are studied for their heavy ion radiation performance. The control gate of the RFET device is found to be the most sensitive region, for normal striking incidence. Single event upset (SEU) performance of the RFET based SRAM is evaluated through the critical LET (Linear Energy Threshold).

这项工作演示了使用平面可重配置器件（可重配置场效应晶体管-RFET）的SRAM单元操作。SRAM实现中使用的所有六个设备都是相同的。N和P操作是通过程序门实现的。使用保持，写入和读取静态噪声容限（SNM）评估单元性能。研究了RFET和基于RFET的SRAM单元的重离子辐射性能。对于正常的撞击事件，发现RFET器件的控制栅极是最敏感的区域。通过临界LET（线性能量阈值）评估基于RFET的SRAM的单事件翻转（SEU）性能。