Abstract In this paper, a model based on charge collection efficiency (CCE) has been developed to investigate the charge transport mechanism of self-powered GaN p-i-n α-particle detector. To validate the model, a GaN p-i-n α-particle detector with 20 μm unintentionally doped layer was fabricated and irradiated by 5.48 MeV α particles. The contribution of hole diffusion to CCE was observed to be 17% at zero bias and slightly decreased to 14% at a reverse voltage of 10 V. The consistency between the experimental result and theoretical calculation demonstrates that charge transport mechanism is dominated by hole diffusion of non-depleted region. This work proves the appreciable advantage of GaN p-i-n detectors to detect α particles even without external power supply.

中文翻译：

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自供电GaN pin α粒子探测器的电荷传输机制

摘要 本文开发了一种基于电荷收集效率（CCE）的模型来研究自供电 GaN pin α 粒子探测器的电荷传输机制。为了验证该模型，制造了具有 20 μm 无意掺杂层的 GaN pin α 粒子探测器，并由 5.48 MeV α 粒子照射。观察到空穴扩散对 CCE 的贡献在零偏压下为 17%，在反向电压为 10 V 时略微下降至 14%。 实验结果与理论计算之间的一致性表明电荷传输机制由空穴扩散控制非耗尽区。这项工作证明了 GaN pin 探测器即使在没有外部电源的情况下也能探测 α 粒子的显着优势。