The formulas for temperature dependence of λ(χ_real, E_g, T), λ(χ_real, E_g, T)_p, ẟ and σ of insulators with less impurities were deduced and proved to be true; λ(χ_real, E_g, T) is the mean escape depth of secondary electrons emitted from insulators with efficient electron affinity χ_real and band gap E_g at Kelvin temperature T, λ(χ_real, E_g, T)_p is the λ(χ_real, E_g, T) due to electron-lattice scatterring in insulators, ẟ is secondary electron yield, σ is total ẟ. Analyses of data and the deduced formulas indicate that the temperature dependence of ẟ and σ of insulators with less impurities increase with the increasing [λ(χ_real, E_g, T)/λ(χ_real, E_g, T)_p], and that λ(χ_real, E_g, T), λ(χ_real, E_g, T)_p, ẟ and σ of insulators with less impurities decrease nearly linearly with increasing T in the range T > Θ_D but decrease nonlinearly with increasing T in the range mΘ_D < T < Θ_D, Θ_D is Debye temperature, m of a given insulator is a constant which is < 0.4. The method of obtaining λ(χ_real, E_g, T)_Mee and corresponding χ_real by secondary electron emission (SEE) was presented, λ(χ_real, E_g, T)_Mee is the λ(χ_real, E_g, T) due to electron–electron scatterring in insulator. It concludes that the method presented here to obtain special formula for λ(χ_real, E_g, T)_p and corresponding χ_real is a good method to research electron-lattice interaction by SEE, and that the method presented here to obtain values of λ(χ_real, E_g)_Mee and corresponding χ_real is a good method to research electron–electron interaction by SEE. According to the values of Θ_D, experimental σ, characteristics of temperature dependence of ẟ and σ and deduced formulas, it concludes that the method presented here to determine Θ_D by SEE is a better method to determine Θ_D of insulator with less impurities.

对于温度依赖性的公式λ（χ_真实，ê_克，Ť），λ（χ_真实，ê_克，Ť）_p，ẟ和σ与推导出，并证明是真杂质少绝缘子; λ（χ_真实，ê_克，Ť）是从与有效的电子亲和力绝缘体发射的二次电子的平均逃逸深度χ_真实和带隙Ë_克在开尔文温度Ť，λ（χ_真实，ê_克，Ť）_p是λ（χ_真实，ê_克，Ť）由于在绝缘体电子晶格scatterring，ẟ是二次电子产率，σ是总ẟ。数据和推定式分析表明，对温度的依赖性ẟ和σ绝缘子具有更少的杂质与增加[增加λ（χ_真实，ë_克，Ť）/ λ（χ_真实，ê_克，Ť）_p ]，而λ（χ_真实，ê_克，Ť），λ（χ_真实，ê_克，Ť）_p，ẟ和σ与绝缘体的杂质少减少几乎线性增加Ť范围Ť  >  Θ _d但随着减少非线性Ť范围Mθ _d  <  Ť  <  Θ _d，Θ _d是德拜温度，米的给定绝缘体的是一个常数，它<0.4。获得的方法，λ（χ_真实，ê_克，Ť）_眉和对应χ_真实由二次电子发射（SEE）提出，λ（χ_真实，ê_克，Ť）_眉是λ（χ_真实，ê_克，Ť）由于在绝缘体电子-电子scatterring。它得出结论，该方法呈现的这里得到特殊配方为λ（χ_真实，ê_克，Ť）_p和对应的χ_真正是一个很好的方法，以通过查阅研究电子晶格相互作用，并且该方法呈现在这里获得的值λ（χ_真实，è_克）_眉和对应χ_实是通过SEE研究电子相互作用的好方法。据的值Θ _d，实验σ，对温度的依赖性的特性ẟ和σ和推导公式，它得出结论，该方法呈现的这里确定Θ _d由SEE是一个更好的方法，以确定Θ _d绝缘体的具有较少的杂质。