The modifications in structural and optical properties of metal organic vapour phase epitaxy (MOVPE) grown stacked layers of InSb/GaSb nanostructures which were investigated as a function of the InSb quantum dot (QD) layer deposition time using scanning probe microscopy (SPM), transmission electron microscopy (TEM), photoluminescence (PL) and Raman spectroscopy have been reported in this work. At 10 K, a red-shift from 0.76 eV to 0.73 eV in photoluminescence (PL) emission wavelength of the nanostructures was observed with increasing deposition time of the buried InSb QD layers which were transformed into quantum wells (QWs) after capping. Room temperature Raman scattering spectra from the samples indicates a slight blue shift and decrease in the intensity of the InSb-like longitudinal optical phonon (LO) mode as the InSb dot layer deposition time decreases from 5 s to 3 s. The presence of structural defects in the stacked layers of the nanostructures is suggested to act as channels and charge traps of non-radiative recombination for the carriers in some of the layers which accounts for the low intensity of the PL emission observed from the stacked layers.

InSb / GaSb纳米结构的金属有机气相外延（MOVPE）生长的堆叠层的结构和光学性质的变化，使用扫描探针显微镜（SPM），透射率研究了InSb量子点（QD）层沉积时间的函数电子显微镜（TEM），光致发光（PL）和拉曼光谱已经在这项工作中得到了报道。在10 K下，随着掩盖后的InSb QD层沉积时间的增加，观察到纳米结构的光致发光（PL）发射波长从0.76 eV到0.73 eV的红移。样品的室温拉曼散射光谱表明，随着InSb点层沉积时间从5 s减少到3 s，InSb类纵向光学声子（LO）模式的强度会发生轻微的蓝移并降低。建议在纳米结构的堆叠层中存在结构缺陷，以作为某些层中载流子的非辐射复合的通道和电荷陷阱，这是从堆叠层观察到的PL发射强度低的原因。