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Atomic-scale control of tunneling in donor-based devices
Communications Physics ( IF 5.5 ) Pub Date : 2020-05-11 , DOI: 10.1038/s42005-020-0343-1
Xiqiao Wang , Jonathan Wyrick , Ranjit V. Kashid , Pradeep Namboodiri , Scott W. Schmucker , Andrew Murphy , M. D. Stewart , Richard M. Silver

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.



中文翻译:

基于施主的设备中隧道的原子尺度控制

原子精确的基于供体的量子器件是固态量子计算和模拟量子模拟的有希望的候选者。然而,原子精确制造中的关键挑战意味着尚未证明对隧穿速率和隧道耦合进行系统的原子尺度控制。在这里,使用室温生长的锁定层并在整个制造过程中进行精确控制,我们减少了意外的掺杂物移动,同时在扫描隧道显微镜(STM)图案化的设备中实现了高质量的外延。使用Si(100)2×1表面重建作为原子精确的标尺来表征精密图案化单电子晶体管中的隧道间隙,我们证明了当隧道电阻从7二聚体变化时,隧穿电阻的指数缩放行到16个二聚体行。

更新日期:2020-05-11
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