Controlling pore structure, e.g. pore diameter, size and distribution of porous silicon (PS) is highly needed for technological applications such as microfluidic operation and filtration in which the pore size and shape can block the entrance of some species or increase its concentration or purity by separation. In the present study, highly doped p-type silicon is utilized to prepare PS with different pore dimensions by electrochemical etching (anodization) process in HF and C₂H₅OH mixture. The anodization process was performed under various conditions such as different electrolyte types, temperature, and concentrations, etching potential, current density, and etching duration. This research was to further study the influence of electrochemical etching parameters on pore formation kinetics including pore size, layer thickness and mechanistic aspects of silicon etching. The study offers a fundamental understanding of the fabrication process of porous silicon that may be exploited in nanotechnology applications. The present study confirms that the anodization rate increases with increasing the steady-state current at all the presented conditions. It is demonstrated that adjusting the anodizing potential is very important as it determines whether the anodization will lead to PS formation and/or PS dissolution.

对于诸如微流体操作和过滤之类的技术应用，控制孔结构（例如孔直径，大小和多孔硅（PS）的分布）是非常需要的，在该技术应用中，孔的大小和形状可能会阻止某些物质的进入或增加其浓度或纯度。分离。在本研究中，通过在HF和C ₂ H _5中进行电化学蚀刻（阳极氧化）工艺，利用高掺杂的p型硅制备具有不同孔径的PS。OH混合物。阳极氧化工艺在各种条件下进行，例如不同的电解质类型，温度和浓度，蚀刻电位，电流密度和蚀刻持续时间。这项研究是为了进一步研究电化学刻蚀参数对孔形成动力学的影响，包括孔尺寸，层厚度和硅刻蚀机理。这项研究提供了对可用于纳米技术应用中的多孔硅制造工艺的基本理解。本研究证实，在所有提出的条件下，阳极氧化速率均随稳态电流的增加而增加。事实证明，调节阳极氧化电位非常重要，因为它决定了阳极氧化是否会导致PS形成和/或PS溶解。