In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280–330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-end-of-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280–335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286–310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 μm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

中文翻译：

---

采用 InGaAs mHEMT 技术的宽带 300-GHz 功率放大器 MMIC

在本文中，我们报告了覆盖 280–330 GHz 频率范围的紧凑型固态功率放大器 (SSPA) 毫米波单片集成电路 (MMIC)。所使用的技术是 35 纳米栅极长度的 InGaAs 变质高电子迁移率晶体管 (mHEMT) 技术。报告了两个功率放大器 MMIC，基于一个紧凑的单位放大器单元，使用两个不同的威尔金森功率组合器并行化两次。Wilkinson 合路器采用高架共面波导和空气桥薄膜传输线设计，以便在这种 InGaAs mHEMT 技术的线路后端实现低损耗 70 Ω 线路。五级 SSPA MMIC 在 280–335 GHz 频带内实现了大约 20 dB 的测量小信号增益。报告了最先进的输出功率性能，在 286–310 GHz 频段上实现至少 13 dBm，在 300 GHz 下的峰值输出功率为 13.7 dBm (23.4 mW)。PA MMIC 设计用于减小芯片宽度，同时将输出级的总栅极宽度最大化为 512 μm，使用基于共源共栅和共源器件的紧凑拓扑，显着提高了每个所需芯片宽度的输出功率。