Measuring bias temperature instability (BTI) by ring oscillators (ROs) is frequently used. However, the performance of a semiconductor chip is fluctuated dynamically due to bias, temperature and etc. BTI-sensitive and -insensitive ROs are implemented in order to extract BTI-induced degradation without temporal fluctuation factors. A test chip including those 840 ROs was fabricated in a 65 nm process. BTI-induced degradation without temporal fluctuation was successfully measured by subtracting results of BTI-insensitive ROs from those of BTI-sensitive ones. Extraction of BTI-induced degradation is useful in any supply voltage. Performance degradation of NMOS and PMOS transistors mainly due to BTI increases along power law function and fitting parameters decreases as the supply voltage decreases.

中文翻译：

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通过使用 BTI 敏感和 BTI 不敏感的环形振荡器，在没有时间因素的情况下提取 BTI 引起的退化的电压依赖性

经常使用通过环形振荡器 (RO) 测量偏置温度不稳定性 (BTI)。然而，半导体芯片的性能会因偏置、温度等而动态波动。 BTI 敏感和不敏感 RO 的实施是为了在没有时间波动因素的情况下提取 BTI 引起的退化。包括那 840 个 RO 的测试芯片是在 65 nm 工艺中制造的。通过从 BTI 敏感 RO 的结果中减去 BTI 不敏感 RO 的结果，成功测量了 BTI 诱导的无时间波动的降解。提取 BTI 引起的退化在任何电源电压下都是有用的。NMOS 和 PMOS 晶体管的性能下降主要是由于 BTI 沿着幂律函数增加，并且拟合参数随着电源电压的降低而降低。