A resistance measurement platform for the statistical evaluation of emerging memory materials is presented. We developed two types of platforms, depending on the resistance range of memory materials. The high resistance (HR) measurement typemeasures the resistance of 490,000 cells in the range of 2.85 $\text{k}{\Omega }- 10\,\,\text{M}{\Omega }$ within 497 ms. The low resistance (LR)measurement type measures the resistance of 10,000 cells in the range of $390\,\,{\Omega }- 10\,\,\text{M}{\Omega }$ within11 ms. Various memory materials can be commonly tested only by forming materials on top of the platform. We measured the resistance of N⁺Poly-Si resistors formed by the platform fabrication process to verify the circuit operation. We also measured the on-resistance of selectors (R_ON) by shorting each cell to GND for the confirmation of the background resistance. Moreover, we formed ${\alpha }$ -Si on the platform by PE-CVD to test the process of forming materials on the platform. Then the resistance of ${\boldsymbol{\alpha }}$ -Si and its temporal variation showing random telegraph noise behaviors were measured statistically.

中文翻译：

---

用于新兴记忆材料统计分析的电阻测量平台

提出了一种用于对新兴存储材料进行统计评估的电阻测量平台。我们开发了两种类型的平台，具体取决于存储材料的电阻范围。高电阻 (HR) 测量类型在 2.85 范围内测量 490,000 个电池的电阻 $\text{k}{\Omega }- 10\,\,\text{M}{\Omega }$ 在 497 毫秒内。低电阻 (LR) 测量类型可测量 10,000 个电池的电阻，范围为 $390\,\,{\Omega }- 10\,\,\text{M}{\Omega }$ 11 毫秒内 各种记忆材料只能通过在平台顶部形成材料来进行通用测试。我们测量了平台制造工艺形成的 N ⁺ Poly-Si 电阻器的电阻，以验证电路操作。我们还通过将每个单元短接到 GND 来测量选择器的导通电阻 (R _ON )，以确认背景电阻。此外，我们形成了 ${\alpha }$ -Si 在平台上通过 PE-CVD 来测试在平台上形成材料的过程。那么电阻 ${\boldsymbol{\alpha }}$ -Si 及其显示随机电报噪声行为的时间变化进行了统计测量。