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Quantum Transport in Nanostructures of 3D Topological Insulators
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.6 ) Pub Date : 2020-05-06 , DOI: 10.1002/pssb.202000066
Romain Giraud 1, 2 , Joseph Dufouleur 1, 3
Affiliation  

Quantum transport measurement is an efficient tool to unveil properties of topological surface states in 3D topological insulators. Herein, experimental and theoretical results are reviewed, presenting first some methods for the growth of nanostructures. The effect of the disorder and the band bending is discussed in details both experimentally and theoretically. Then, the focus is put on disorder and quantum confinement effect in topological surface states of 3D topological insulators narrow nanostructures. Such effect can be revealed by investigating quantum interferences at very low temperature such as Aharonov–Bohm oscillations or universal conductance fluctuations.

中文翻译:

3D拓扑绝缘体纳米结构中的量子传输。

量子传输测量是揭示3D拓扑绝缘体中拓扑表面状态的属性的有效工具。在这里,回顾了实验和理论结果,首先提出了一些用于生长纳米结构的方法。实验和理论上都详细讨论了无序和带弯曲的影响。然后,重点放在窄纳米结构的3D拓扑绝缘子的拓扑表面状态中的无序和量子约束效应上。通过研究在非常低的温度下的量子干扰(例如Aharonov-Bohm振荡或普遍电导波动)可以揭示这种效应。
更新日期:2020-05-06
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