Abstract The chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-voltage (C-V) measurements before and after irradiation were performed at high frequency. Furthermore, significant changes were observed depending on the radiation dose of the oxide traps and the intensity of the interface state. The sensitivity of this MOS capacitor is 4.3, 31.3 and 15.6 times less sensitive compared to the same thickness as Sm2O3, Al2O3 and Gd2O3. Therefore, it can be used as radiation-resistant material in nuclear reactors and space applications due to its stable electrical characteristics compared to other defined dielectrics. Interface states, (Nit) Barrier potential (Φb) and oxide traps (Not) have also been investigated depending on the radiation effects. Φb is one of these important electrical properties. Φb values decreased with increasing in radiation dose. Besides, radiation and frequency dependent dielectric constant (e′), dielectric loss (e″) and dielectric loss tangent (tanδ) and conductivity (σac) of zirconium silicate were investigated. It is concluded that high-k zirconium Silicate is suitable for electronics applications in radiation harsh environment.

中文翻译：

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硅酸锆P-MOS电容的辐射响应

摘要 通过FTIR研究了硅酸锆薄膜的化学键合。辐照前后的电容电压 (CV) 测量是在高频下进行的。此外，根据氧化物陷阱的辐射剂量和界面态的强度，观察到了显着的变化。与相同厚度的 Sm2O3、Al2O3 和 Gd2O3 相比，这种 MOS 电容器的灵敏度分别低 4.3、31.3 和 15.6 倍。因此，与其他定义的电介质相比，它具有稳定的电气特性，因此可用作核反应堆和空间应用中的抗辐射材料。根据辐射效应，还研究了界面态、(Nit) 势垒电位 (Φb) 和氧化物陷阱 (Not)。Φb 是这些重要的电气特性之一。Φb 值随着辐射剂量的增加而降低。此外，研究了硅酸锆的辐射和频率相关介电常数（e'）、介电损耗（e”）和介电损耗角正切（tanδ）和电导率（σac）。结论是高k硅酸锆适用于辐射恶劣环境中的电子应用。