In this paper, a new structure: triple work function metal gate SOI MESFET, intended for integration into the deep-submicron CMOS technology, is proposed. The gate of the device consists of three different materials which are laterally merged into one. The difference in the work function of dissimilar gate materials introduces two step changes in the profile of channel potentials which screens the threshold-defining region of the channel from the impact of drain potential. Therefore, the effects associated with DIBL are significantly alleviated. On the basis of exact solution of the Poisson equation in the channel region, an analytical subthreshold model for the device is developed. Using the analytical data, the device has been characterized and compared with conventional device in terms of potential function, DIBL, threshold voltage roll-off, and subthreshold swing. The TCAD simulator ATLAS from Silvaco has been used to validate the analytical results. The feasibility of device fabrication is also demonstrated.

本文提出了一种新的结构：三重功函数金属栅极SOI MESFET，旨在集成到深亚微米CMOS技术中。该设备的门由三种不同的材料组成，这些材料横向合并为一种。不同栅极材料的功函数的差异在沟道电势的分布中引入了两个步骤的变化，从而从漏极电势的影响中筛选出沟道的阈值限定区域。因此，与DIBL相关的影响被大大减轻。基于通道区域内泊松方程的精确解，建立了器件的亚阈值分析模型。使用分析数据，该器件已被表征，并且在电位功能，DIBL，阈值电压降落，和亚阈值摆动。Silvaco的TCAD仿真器ATLAS已用于验证分析结果。还证明了装置制造的可行性。