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Perforated serpentine membrane with AlN as dielectric material shunt capacitive RF MEMS switch fabrication and characterization
Microsystem Technologies ( IF 2.1 ) Pub Date : 2020-01-31 , DOI: 10.1007/s00542-020-04755-3
Lakshmi Narayana Thalluri , Koushik Guha , K. Srinivasa Rao , G. Venkata Hari Prasad , K. Girija Sravani , K. S. R. Sastry , Appala Raju Kanakala , P. Bose Babu

In this communication, we have designed, simulated, performance improved, fabricated and characterized a shunt capacitive RF MEMS switch with perforated serpentine membrane (Au). Fabrication is done using surface micromachining with four masks. AlN dielectric material of 50 nm thickness is offering high isolation of − 58.5 dB at 31.5 GHz, and incorporation of perforation to the membrane the switch insertion loss is very low i.e., − 0.4 dB. The perforated serpentine membrane with non-uniform meanders of 500 nm thickness using Au material is helped to reduce the actuation voltage, the fabricated switch is requiring 4.5 V actuation voltage. DC sputtering PVD is used to deposit metal (Au) and dielectric (AlN) thin Films. S1813 photoresist is used as a sacrificial layer and the membrane structure is released using piranha, IPA and critical point drying (Pressure 1260 Psi, Temperature 31 °C).



中文翻译:

以AlN为介电材料的多孔蛇形膜分流电容RF MEMS开关的制造和表征

在本次交流中,我们设计,仿真,改进了性能,制造并描述了带有穿孔蛇形膜(Au)的并联电容RF MEMS开关。使用具有四个掩模的表面微加工完成制造。厚度为50 nm的AlN介电材料在31.5 GHz时具有− 58.5 dB的高隔离度,并且将穿孔结合到膜中时,开关的插入损耗非常低,即− 0.4 dB。使用金材料,具有500 nm厚度不均匀曲折的穿孔蛇形膜有助于降低激励电压,所制造的开关需要4.5 V激励电压。DC溅射PVD用于沉积金属(Au)和电介质(AlN)薄膜。S1813光刻胶用作牺牲层,并使用食人鱼释放膜结构,

更新日期:2020-01-31
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