A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current–voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an I_UV/I_dark of ∼100 to ultraviolet light irradiation.

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中文翻译：

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光刻构建的单 ZnO 纳米线器件及其紫外光响应。

稀疏的 ZnO 纳米线阵列，纵横比约为1。通过控制纳米线生长初期种子的密度，合成了120和1μm/h的生长速率。空间分离的纳米线从生长基底上切下而不断裂，因此可用于通过光刻构建单纳米线器件。该器件表现出与 ZnO 纳米线和电极之间的欧姆接触相关的线性电流-电压特性。该器件进一步证明了对紫外光照射的可靠光响应，I _UV / I _dark约为 100。

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