The electronic structure of the epitaxial GaN, InN nanolayers, and the ultrathin Cs/GaN and Cs/InN interfaces was investigated under ultrahigh vacuum at various Cs coverages. The experiment was carried out using synchrotron‐based photoelectron spectroscopy. The photoemission spectra of the valence band and the In 4d, N 2s, Ga 3d, and Cs 4d semicore levels were studied as a function of Cs coverages. It was found that the Cs adsorption in the submonolayer coverage region causes substantial changes in the spectra due to charge transfer between the Cs adlayer and surface Ga or In atoms. The strong interaction of the dangling bonds of Ga or In with Cs adatoms effectively increases the Ga or In valency.

中文翻译：

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Cs / GaN和Cs / InN界面的电子表面结构的光电子能谱

在不同的Cs覆盖率下，在超高真空下研究了外延GaN，InN纳米层以及超薄Cs / GaN和Cs / InN界面的电子结构。该实验是使用基于同步加速器的光电子能谱仪进行的。价带和In 4 d，N 2 s，Ga 3 d和Cs 4 d半芯能级的光发射光谱作为Cs覆盖率的函数进行了研究。已经发现，由于Cs吸附层与表面Ga或In原子之间的电荷转移，亚单分子层覆盖区域中的Cs吸附会引起光谱的显着变化。Ga或In的悬挂键与Cs原子的强相互作用有效地提高了Ga或In的化合价。