Beta-(Al x Ga 1−x ) 2 O 3 thin films were prepared on c-plane sapphire substrates by low-pressure reactive vapor deposition at different temperature. The crystal structure, surface morphology, and optical properties of β -(Al x Ga 1−x ) 2 O 3 films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), and transmission spectra. The β -(Al x Ga 1−x ) 2 O 3 films were preferred [ ##IMG## [http://ej.iop.org/images/2162-8777/9/4/045016/jssab89b7ieqn1.gif] {$\overline{2}$} 01] orientation. The film grown at 1400 °C has narrower full width half maximum (FWHM) than grown at 1450 °C. As the growth temperature increases, the Al group decreases. The Al content of β -(Al x Ga 1−x ) 2 O 3 films grown at 1400 °C ...

中文翻译：

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通过在蓝宝石衬底上的低压反应气相沉积制备高Al含量（Al x Ga 1-x）2 O 3膜

通过在不同温度下进行低压反应性气相沉积，在c面蓝宝石衬底上制备了Beta-（Al x Ga 1-x）2 O 3薄膜。用X射线衍射（XRD），扫描电子显微镜（SEM），原子力显微镜（AFM）研究了β-（Al x Ga 1-x）2 O 3薄膜的晶体结构，表面形貌和光学性质。 X射线光电子能谱（XPS）和透射光谱。最好使用β-（Al x Ga 1-x）2 O 3膜[## IMG ## [http://ej.iop.org/images/2162-8777/9/4/045016/jssab89b7ieqn1.gif] {$ \ overline {2} $} 01]方向。与在1450°C下生长相比，在1400°C下生长的薄膜具有更窄的半峰全宽（FWHM）。随着生长温度的升高，Al基团减少。在1400°C下生长的β-（Al x Ga 1-x）2 O 3薄膜的Al含量...