The light emission property of InGaN quantum wells is seriously deteriorated in the red wavelength with high indium concentration, which is accompanied by structural defects called trench defects. However, the formation mechanism of trench defects has not been fully understood. In this study, we reveal the origin of this defect by utilizing the simplest system, one consisting of a single InGaN quantum well on a single-crystal GaN substrate to extract the effect solely from indium addition. Trench defects are found to be associated with a stacking fault in the cap GaN layer right above InGaN and with an excess layer in InGaN.

中文翻译：

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在单晶GaN衬底上生长的InGaN / GaN单量子阱中沟槽缺陷形成的机理

在具有高铟浓度的红色波长中，InGaN量子阱的发光性能严重恶化，这伴随着称为沟槽缺陷的结构缺陷。然而，沟槽缺陷的形成机理尚未被完全理解。在这项研究中，我们通过利用最简单的系统揭示了这种缺陷的根源，该系统由单晶GaN衬底上的单个InGaN量子阱组成，以仅从铟添加中提取效应。发现沟槽缺陷与InGaN上方的盖GaN层中的堆叠缺陷以及InGaN中的过量层有关。