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A phenomenological study in CeCoSi system
Solid State Communications ( IF 2.1 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.ssc.2020.113953
Sumal Chandra , Arifa Khatun , Romana Jannat

Abstract We present phenomenological models calculations for the magnetic susceptibility, valence of Ce ions and the effective Bhor magneton number of Ce ion in CeCoSi system. We found that the susceptibility of this compound explained by the interconfiguration fluctuation (ICF) model. We obtain the valence of Ce ions 3.42 at the room temperature. This result suggests that CeCoSi system is a valence fluctuation system. We found the effective Bhor magneton number per atom 2.35 μ B by the 2-state model which is close to the expected for a free C e + 3 ion.

中文翻译:

CeCoSi系统的现象学研究

摘要 我们提出了CeCoSi 系统中Ce 离子的磁化率、价态和Ce 离子的有效Bhor 磁子数的现象学模型计算。我们发现这种化合物的敏感性可以通过构型波动 (ICF) 模型来解释。我们在室温下获得了 Ce 离子的价数 3.42。该结果表明 CeCoSi 系统是一个价波动系统。我们通过二态模型发现每个原子的有效 Bhor 磁子数为 2.35 μ B,这接近于自由 C e + 3 离子的预期。
更新日期:2020-08-01
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