Abstract This paper is devoted to synthesizing good quality polycrystalline ZnGa2S4 thin films of different thicknesses using inexpensive pyrolysis technology for the first time. Then study the crystal structure, crystal defects and the microstructural properties of these films. The novel ternary ZnGa2S4 thin films are investigated by X-ray diffraction, which exhibited that films have polycrystalline tetragonal nature and their space group is I 42 ‾ m ( 121 ) . The compositional elements of films have been investigated using energy-dispersive X-ray spectroscopy and the result is all synthesized films have good stoichiometry. Field-emission-scanning-electron microscope, FE-SEM is used to study the surface morphology of films. An intensive comparative study has been carried out for studying microstructural parameters and crystal imperfections. The corrected integral breadth, β(rad) of observed diffraction lines have been determined by several distribution functions. Major diffraction lines showed that the integral breadth values decrease gradually as thickness increased, while they increase as increasing the diffraction angle of films. Scherrer and Williamson-Hall equations, both the uniform deformation and uniform stress deformation models and the size-strain plot method have been utilized in this study. The results showed that all films have nanosized dimensions and the crystallite size increases with increasing the thickness. The internal stresses, residual microstrian, and lattice microstain are decreasing as the thickness increased. Along with, the crystal lattice distortion, dislocation density and the number of crystallites are also decreasing. Consequently, increasing the thickness of film samples improves their crystallization and reducing their crystalline defects, too.

中文翻译：

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使用 X 射线衍射研究新型纳米结构 ZnGa2S4 薄膜的微观结构参数和晶体缺陷的深入比较研究

摘要 本文首次致力于利用廉价的热解技术合成不同厚度的优质多晶ZnGa2S4薄膜。然后研究这些薄膜的晶体结构、晶体缺陷和微观结构特性。通过X射线衍射研究了新型三元ZnGa2S4薄膜，表明薄膜具有多晶四方性质，空间群为I 42 ‾ m ( 121 ) 。已经使用能量色散 X 射线光谱研究了薄膜的组成元素，结果是所有合成的薄膜都具有良好的化学计量。场发射扫描电子显微镜，FE-SEM用于研究薄膜的表面形貌。为了研究微观结构参数和晶体缺陷，已经进行了深入的比较研究。观测到的衍射线的修正积分宽度 β(rad) 已由几个分布函数确定。主要衍射线表明积分宽度值随着厚度的增加而逐渐减小，而随着薄膜衍射角的增加而增加。本研究中使用了 Scherrer 和 Williamson-Hall 方程、均匀变形和均匀应力变形模型以及尺寸应变图方法。结果表明，所有薄膜都具有纳米尺寸，晶粒尺寸随着厚度的增加而增加。随着厚度的增加，内应力、残余微条纹和晶格微污染都在减少。与此同时，晶格畸变、位错密度和微晶数量也在减少。最后，