The influence of annealing temperature on the output characteristics of solution processable vertical organic light-emitting transistor (VOLET) was investigated. Poly[(vinylidenefluoride-co-trifluoroethylene] (PVDF-TrFE) and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) have been used as a dielectric and emissive layer, respectively, in a silver nanowire (AgNW) sourced VOLET. It was found that the performance of the VOLET is the best after annealed at 100 oC. A high polarization of the PVDF-TrFE promotes more charged carrier to be accumulated at AgNW/MEH-PPV interface. Surface morphology and photoluminescence results show that a high surface roughness of MEH-PPV exhibit bright emission due to reduction of internal reflection of light emission.

研究了退火温度对溶液可加工垂直有机发光晶体管（VOLET）的输出特性的影响。聚[（偏二氟乙烯-三氟乙烯共聚物）（PVDF-TrFE）和聚[2-甲氧基-5-（2-乙基己氧基）-1,4-亚苯基亚乙烯基]（MEH-PPV）已用作介电和发射层，分别在以银纳米线（AgNW）为原料的VOLET中发现，VOLET的性能在100 oC退火后是最好的。PVDF-TrFE的高极化度会促使更多的带电载流子在AgNW / MEH-处积累PPV界面：表面形态和光致发光结果表明，MEH-PPV的高表面粗糙度由于减少了发光的内部反射而呈现出明亮的发光。